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Using Power Reduction Techniques, a Comparison of Differential and Latch Type Sense Amplifier Circuits

https://doi.org/10.51976/jfsa.512202

Author Details ( * ) denotes Corresponding author

1. * Dharmendra Kumar Tiwari, PhD Scholar, Department of Mechanical Engineering, United University, Prayagraj, Uttar Pradesh, India (dharmu.tiwari@gmail.com)
2. Narendra Kumar Verma, Madhav Institute of Technology & Science, Gwalior, Madhya Pradesh, India (narendra.verma@itmgoi.in)
3. Jitendra Singh Kirar, Department of Mechanical Engineering, RGPV (Rajiv Gandhi Prodyogiki Vishwavidyalaya, State Technical University), Bhopal, Madhya Pradesh, India

Researchers have investigated several different sense amplifiers’ yield and other quantitative features. Amplification is required for various power-saving methods, including the sleep transistor, the sleep stack, the sleepy keeper, and others. This study aims to evaluate how much energy is consumed by the many different sense amplifier topologies. Simulations have shown that adopting a sleep transistor approach can significantly reduce the amount of power lost even while operating at 1.2V

Keywords

SRAMC (Static Random-Access Memory Cell); VMDSA (voltage mode differential sense amplifier); Sense Amplifier (SA); VLSA (voltage latch sense amplifier); CLSA (current latch sense amplifier)

  1. Yong-peng Tao, Wei-ping Hu, "Design of Sense Amplifier in the High-Speed SRAM," International Conference on Cyber-Enabled Distributed Computing and Knowledge Discovery, pp. 384-387, 2015.
  2. Menu Rani Garg, Anu Tonk, "A Study of Different Types of Voltage & Current Sense Amplifier used in SRAM," International Journal in Advanced Research in Computer and Communication Engineering, Vol.4, PP: 30-35.
  3. Aiyappan Natarajan, Vijay Shanker, Atul Maheshwari, "Sensing Design Issue in Deep Submicron CMOS SRAM," IEEE Computer Society Annual Symposium on VLSI, pp- 42-45, 2005.
  4. Kamal Pandey, Vishal Yadav, "Design and Analysis of Low Power Latch Sense Amplifier," IOSR Journal of Electronics and Communication Engineering, Vol.9, PP: 69-73, 2014.
  5. .Geetha Priya, Dr.K.Baskaran, D.Krishnaveni. "Leakage Power Reduction Techniques in Deep Submicron Technologies for VLSI Applications" ELSEVIER, International Conference on Communication Technology and System Design 2011.
  6. Afshin Abdollahi, Farzan Fallah, Massoud Pedram, "A Robust Power Gating Structure and Power Mode Transition Strategy for MTCMOS Design," Very Large Scale Integration (VLSI) Systems IEEE Transactions on, vol. 15, pp. 80-89, 2007, ISSN 1063-8210
  7. A. Sathanur, A. Pullini, L. Benini, A. Macii, E. Macii, M. Poncino, "A Scalable Algorithmic Framework for Row-Based Power-Gating," Design Automation and Test in Europe 2008. DATE ‘08, pp. 379-384, 2008, ISSN 1530-1591
  8. K Sridhara, G S Biradar, Raju Yanamshetti, "Subthreshold leakage power reduction in VLSI circuits: A survey," Communication and Signal Processing (ICCSP) 2016 International Conference on, pp. 1120-1124, 2016.
  9. H. Dounavi, Y. Sfikas, and Y. Tsiatouhas, "Periodic Aging Monitoring in SRAM Sense Amplifiers," 2018 IEEE 24th International Symposium on On-Line Testing And Robust System Design (IOLTS), Platja d’Aro, 2018, pp. 12-16.
  10. Na, S. Woo, J. Kim, H. Jeong, and S. Jung, "Comparative Study of Various Latch-Type Sense Amplifiers," in IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 22, no. 2, pp. 425-429, Feb. 2014.
  11. Manoj Sinha, Steven Hsu, Atila Alvandpour, Wayne Burleson, Ram Krishnamurthy, Shekhar Borhr. "High-Performance and Low-Voltage Sense-Amplifier Techniques for sub-90nm SRAM." SOC Conference, 2003. Proceedings. IEEE International [Systems-on-Chip].
  12. Baker Mohammad, Percy Dadabhoy, Ken Lin, Paul Bassett. "Comparative study of current mode and voltage mode sense amplifier used for 28nm SRAM." 24th International Conference on Microelectronic, 07 March 2013.
  13. Yiqi Wang, Fazhao Zhao, Mengxin Liu, and Zhengsheng Han, "A new full current-mode sense amplifier with compensation circuit," 2011 9th IEEE International Conference on ASIC, Xiamen, 2011, pp. 645-648.
  14. Ravi Dutt, Abhijeet. "High-Speed Current Mode Sense Amplifier for SRAM Applications." IOSR Journal of  Engineering, Vol. 2, pp: 1124-1127, 2012
  15. Zikui Wei, Xiaohong Peng, JinhuiWang, Haibin Yin, Na Gong, "Novel CMOS SRAM Voltage Latched Sense Amplifiers Design Based on 65nm Technology" PP: 3281-3282.
  16. D. Arora, A. K. Gundu and M. S. Hashmi, "A high-speed, low voltage latch type sense amplifier for non-volatile memory," 2016 20th International Symposium on VLSI Design and Test (VDAT), Guwahati, 2016, pp. 1-5.
  17. Reeya Agrawal, V. K. Tomar. "Analysis of Cache (SRAM) Memory for Core I ™ 7 Processor",9th International Conference on Computing, Communication and Networking Technologies (ICCCNT), 2018,402.
  18. D. Schinkel, E. Mensink, E. Klumperink, E. van Tuijl, and B. Nauta, "A Double-Tail Latch-Type Voltage Sense Amplifier with 18ps Setup+Hold Time," 2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, San Francisco, CA, 2007, pp. 314-605.
  19. V. M. Tripathi, S. Mishra, J. Saikia, and A. Dandapat, "A Low-Voltage 13T Latch-Type Sense Amplifier with Regenerative Feedback for Ultra Speed Memory Access," 2017 30th International Conference on VLSI Design and 2017 16th International Conference on Embedded Systems (VLSID), Hyderabad, 2017, pp. 341-346.
  20. A. Hemaprabha and K. Vivek, "Comparative analysis of sense amplifiers for memories," 2015 International Conference on Innovations in Information, Embedded and Communication Systems (ICIIECS), Coimbatore, 2015, pp. 1-6.
  21. M. Jefremow et al., "Time-differential sense amplifier for sub-80mV bit line voltage embedded STT-MRAM in 40nm CMOS," 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers, San Francisco, CA, 2013, pp. 216-217.
  22. Y. Tao and W. Hu, "Design of Sense Amplifier in the High-Speed SRAM," 2015 International Conference on Cyber-Enabled Distributed Computing and Knowledge Discovery, Xi’an, 2015, pp. 384-387.
  23. Rajendra Prasad S, BK Madhavi, K Lal Kishore, "design of 32nm Forced Stack CNTFET SRAM Cell for Leakage Power Reduction", IEEE Conference on Computing, Electronics and Electrical Technologies, pp. 629-633, 2012.
  24. A. Sathanur, A. Pullini, L. Benini, A. Macii, E. Macii, M. Poncino, "A Scalable Algorithmic Framework for Row-Based Power-Gating," Design Automation and Test in Europe 2008. DATE ‘08, pp. 379-384, 2008, ISSN 1530-1591.
  25. J. K. Mishra, H. Srivastava, P. K. Misra, and M. Goswami, "A 40nm Low Power High Stable SRAM Cell Using Separate Read Port and Sleep Transistor Methodology," 2018 IEEE International Symposium on Smart Electronic Systems (iSES) (Formerly iNiS), Hyderabad, India, 2018, pp. 1-5.
  26. Tarunnum Sultana, S.Jagadesh, M.Naveen Kumar, "A Novel Dual-Stack Sleep Technique for Reactivation Noise Suppression in MTCMOS Circuits," IOSR Journal of VLSI and Signal Processing, Vol.-3, pp.32-37, 2013.
  27. K.Gnana Deepika, K.Mariya Priyadarshini, K. David Solomon Raj. "Sleepy Keeper Approach for Power Performance Tuning in VLSI Design." International Journal of Electronics and Communication Engineering.ISSN 0974-2166 Volume 6, Number 1(2013), pp.17-28.
  28. Chakka Sri Harsha Kaushik, Rajiv Reddy Vanjarlapati, Varada Murali Krishna, Tadavarthi Gautam, V Elamaran, "VLSI design of low power SRAM architectures for FPGAs," Green Computing Communication and Electrical Engineering (ICGCCEE) 2014 International Conference on, pp. 1-4, 2014.
  29. Richa Choudhary, Srinivasa Padhy, NirmalKumar Rout, "Enhanced Robust Architecture of Single Bit SRAM Cell using Drowsy Cache and Super cut-off CMOS Concept," International Journal of Industrial Electronics and Electrical Engineering, Volume-3, PP.63-68, July 2011.
  30. Jesal P. Gajjar, Aesha S. Zala, Sandeep K. Aggarwal, "Design and Analysis of 32 bit SRAM architecture in 90nm CMOS Technology" Volume: 03, Issue: 04, Apr-2016, pp:2729-2733.
  31. Reeya Agrawal, V. K. Tomar. "Analysis of Cache (SRAM) Memory for Core I ™ 7 Processor",9th International Conference on Computing, Communication and Networking Technologies (ICCCNT), 2018,40225.
  32. Kundan Vanama, Rithwik Gunnuthula, Govind Prasad, "Design of low power stable SRAM cell," Circuit Power and Computing Technologies (ICCPCT) 2014 International Conference on, pp. 1263-1267, 2014.
  33. Shikha Saun, Hemant Kumar, "Design and performance analysis of 6T SRAM cell on different CMOS technologies with stability characterization", OP Conf. Series: Materials Science and Engineering561 (2019) 012093.
  34. A. Bhaskar, "Design and analysis of low power SRAM cells," 2017 Innovations in Power and Advanced Computing Technologies (i-PACT), Vellore, 2017, pp. 1-5.
  35. Yong-peng Tao, Wei-ping Hu, "Design of Sense Amplifier in the High-Speed SRAM," International Conference on Cyber-Enabled Distributed Computing and Knowledge Discovery, pp. 384-387, 2015.
  36. M. Jefremow et al., "Time-differential sense amplifier for sub-80mV bit line voltage embedded STT-MRAM in 40nm CMOS," 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers, San Francisco, CA, 2013, pp. 216-217.
  37. Y. Tao and W. Hu, "Design of Sense Amplifier in the High-Speed SRAM," 2015 International Conference on Cyber-Enabled Distributed Computing and Knowledge Discovery, Xi’an, 2015, pp. 384-387.
  38. Yiqi Wang, Fazhao Zhao, Mengxin Liu, and Zhengsheng Han, "A new full current-mode sense amplifier with compensation circuit," 2011 9th IEEE International Conference on ASIC, Xiamen, 2011, pp. 645-648.
  39. T. Na, S. Woo, J. Kim, H. Jeong, and S. Jung, "Comparative Study of Various Latch-Type Sense Amplifiers," in IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 22, no. 2, pp. 425-429, Feb. 2014.
  40. Yiping Zhang, Ziou Wang, Canyan Zhu, Lijun Zhang, Aiming Ji, and Lingfeng Mao, "28nm latch type sense amplifier coupling effect analysis," 2016 International Symposium on Integrated Circuits (ISIC), Singapore, 2016, pp. 1-4.
  41. Parashar, A. K., Sharma, P., & Sharma, N. (2022). An investigation on properties of concrete with the adding of waste of ceramic and micro silica. Materials Today: Proceedings.
  42. Sharma, N., Sharma, P., & Parashar, A. K. (2022). Use of waste glass and demolished brick as coarse aggregate in production of sustainable concrete. Materials Today: Proceedings.
  43. A review on the mechanical properties of polymer composites reinforced by carbon nanotubes and graphene, A Kumar, K Sharma, AR Dixit, Carbon Letters, 1-17
  44. Effect of functionalized graphene/CNT ratio on the synergetic enhancement of mechanical and thermal properties of epoxy hybrid composite, MK Shukla, K Sharma, Materials Research Express 6 (8), 085318
  45. Investigating the effects of amine functionalized graphene on the mechanical properties of epoxy nanocomposites, A Yadav, A Kumar, K Sharma, MK Shukla, Materials Today: Proceedings 11, 837-842
  46. N. Sharma, P. Sharma, and S. kr Verma, “Influence of Diatomite on the properties of mortar and concrete: A Review,” in IOP Conference Series: Materials Science and Engineering, 2021, vol. 1116, no. 1, p. 12174.
  47. N. Sharma and P. Sharma, “Effect of hydrophobic agent in cement and concrete : A Review,” IOP Conference Series: Materials Science and Engineering, vol. 1116, no. 1, p. 012175, 2021, doi: 10.1088/1757-899x/1116/1/012175.
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