Journal Press India®

Single-Bit Architecture Cache Memory Design Analysis

https://doi.org/10.51976/jfsa.512207

Author Details ( * ) denotes Corresponding author

1. * Abhishek Srivastava, Assistant Professor, Department of Mechanical Engineering, SR Institute of Management and Technology, Lucknow, Uttar Pradesh, India (sriabhi1991@gmail.com)
2. Shashank Saxena, Assistant Professor, Department of Mechanical Engineering, Bansal Institute of Science and Technology, Bhopal, Madhya Pradesh, India (shashanksaxena7oct@gmail.com)
3. Tarun Sikarwar, Director, DKT Technology Services Pvt. Ltd., (tarun.sikarwar@dkt.co.in)

This work includes the design of voltage and current difference latches and low-power cache memory for a single-bit processor core architecture. To save power, the single-bit cache memory uses voltage differential sensing amplifiers.

Keywords

Voltage differential sense amplifier (VDSA); Write Driver Circuit (WDC); Current Latch Sense Amplifier (CLSA); Differential Sense Amplifier (DSA); Six Transistors Static Random-Access Memory (STSRAM); Latch Sense Amplifier (SA)

  1. Eslami, N., Ebrahimi, B., Shakouri, E. et al. A single-ended low leakage and low voltage 10T SRAM cell with high yield. Analog Integr Circ Sig Process 105, 263–274 (2020).
  2. Bazzi, H., Harb, A., Aziza, H. et al. RRAM-based non-volatile SRAM cell architectures for ultra-low-power applications. Analog Integr Circ Sig Process (2020).
  3. S. Gupta, K. Gupta, B. H. Calhoun, and N. Pandey, "Low-Power Near-Threshold 10T SRAM Bit Cells With Enhanced Data-Independent Read Port Leakage for Array Augmentation in 32-nm CMOS," in IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 66, no. 3, pp. 978-988, March 2019.
  4. H. Dounavi, Y. Sfikas, and Y. Tsiatouhas, "Periodic Aging Monitoring in SRAM Sense Amplifiers," 2018 IEEE 24th International Symposium on On-Line Testing And Robust System Design (IOLTS), Platja d’Aro, 2018, pp. 12-16.
  5. S. Ahmad, B. Iqbal, N. Alam, and M. Hasan, "Low Leakage Fully Half-Select-Free Robust SRAM Cells With BTI Reliability Analysis," in IEEE Transactions on Device and Materials Reliability, vol. 18, no. 3, pp. 337-349, Sept. 2018.
  6. B. N. K. Reddy, K. Sarangam, T. Veeraiah, and R. Cheruku, "SRAM cell with better read and write stability with Minimum area," TENCON 2019 - 2019 IEEE Region 10 Conference (TENCON), Kochi, India, 2019, pp. 2164-2167.
  7. Tripathi Tripti, Chauhan D. S., Singh S. K., and Singh S. V. "Implementation of Low-Power 6T SRAM Cell Using MTCMOS Technique", In Advances in Computer and Computational Sciences, Springer, Singapore, 2017.
  8. M.Geetha Priya, Dr K.Baskaran, D.Krishnaveni "Leakage Power Reduction Techniques in Deep Submicron Technologies for VLSI Applications" ELSEVIER, International Conference on Communication Technology and System Design 2011.
  9. K Sridhara, G S Biradar, Raju Yanamshetti, "Subthreshold leakage power reduction in VLSI circuits: A survey," Communication and Signal Processing (ICCSP) 2016 International Conference on, pp. 1120-1124, 2016.
  10. Gomes Iuri A.C., Meinhardt Cristina, Butzen Paulo F. "Design of 16nm SRAM Architecture" South Symposium on Microelectronics, 2012.
  11. Chakka Sri Harsha Kaushik, Rajiv Reddy Vanjarlapati, Varada Murali Krishna, Tadavarthi Gautam, V Elamaran, "VLSI design of low power SRAM architectures for FPGAs," Green Computing Communication and Electrical Engineering (ICGCCEE) 2014 International Conference on, pp. 1-4, 2014.
  12. Richa Choudhary, Srinivasa Padhy, Nirmal Kumar Rout, "Enhanced Robust Architecture of Single Bit SRAM Cell using Drowsy Cache and Super cut-off CMOS Concept," International Journal of Industrial Electronics and Electrical Engineering, Volume-3, PP.63-68, July 2011.
  13. Jesal P. Gajjar, Aesha S. Zala, Sandeep K. Aggarwal, "Design and Analysis of 32 bit SRAM architecture in 90nm CMOS Technology" Volume: 03, Issue: 04, Apr-2016, pp:2729-2733.
  14. Reeya Agrawal, V. K. Tomar "Analysis of Cache (SRAM) Memory for Core I ™ 7 Processor", 9th International Conference on Computing, Communication and Networking Technologies (ICCCNT), 2018,402.
  15. Kundan Vanama, Rithwik Gunnuthula, Govind Prasad, "Design of low power stable SRAM cell," Circuit Power and Computing Technologies (ICCPCT) 2014 International Conference on, pp. 1263-1267, 2014.
  16. Rakesh Dayaramji Chandankhede, Debiprasad Priyabrata Acharya, Pradip Kumar Patra, "Design of High-Speed sense Amplifier for SRAM," IEEE International Conference on Advanced Communication Control and Computing Technologies, pp. 340-343, 2016
  17. Zikui Wei, Xiaohong Peng, JinhuiWang, Haibin Yin, Na Gong, "Novel CMOS SRAM Voltage Latched Sense Amplifiers Design Based on 65nm Technology" pp.3281-3282, 2016.
  18. B. Wicht, T. Nirschl, and D. Schmitt-Landsiedel, "Yield and speed optimization of a latch-type voltage sense amplifier," in the IEEE Journal of Solid-State Circuits, vol. 39, no. 7, pp. 1148-1158, July 2004.
  19. T. Kobayashi, K. Nogami, T. Shirotori, Y. Fujimoto and O. Watanabe, "A current-mode latch sense amplifier and a static power-saving input buffer for low-power architecture," 1992 Symposium on VLSI Circuits Digest of Technical Papers, Seattle, WA, USA, 1992, pp. 28-29.
  20. T. Kobayashi, K. Nogami, T. Shirotori, and Y. Fujimoto, "A current-controlled latch sense amplifier and a static power-saving input buffer for low-power architecture," in IEEE Journal of Solid-State Circuits, vol. 28, no. 4, pp. 523-527, April 1993.
  21. Sharma, N., Sharma, P., & Parashar, A. K. (2022). Use of waste glass and demolished brick as coarse aggregate in production of sustainable concrete. Materials Today: Proceedings.
  22. Sharma, P., Sharma, N., & Parashar, A. K. (2022). Effects of phase-change materials on concrete pavements. Materials Today: Proceedings.

 

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