To Study Effect on Current Due to Channel Doping Concentrations Variation

Abneesh Kumar; Atal Kumar; R. K. Saxena; Suresh Patel

doi:https://doi.org/10.51976/ijari.231407

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To Study Effect on Current Due to Channel Doping Concentrations Variation

Abneesh Kumar, Atal Kumar, R. K. Saxena, Suresh Patel

Vol 2 , Issue 3 , July - September 2014 | Pages: 37-40 | Research Paper

https://doi.org/10.51976/ijari.231407

Received: July 20, 2014 | Revised: July 30, 2014 | Accepted: August 20, 2014 | Published Online: September 15, 2014

Author Details ( * ) denotes Corresponding author

1. * Abneesh Kumar, Department of Electronics Engineering, IIMT Engineering College, Meerut, Uttar Pradesh, India (er.abikumarec@gmail.com)

2. Atal Kumar, Department of Electronics Engineering, IIMT Engineering College, Meerut, Uttar Pradesh, India

3. R. K. Saxena, Department of EI&CE, Institute of Engineering & Technology, Alwar, Rajasthan, India

4. Suresh Patel, J.T.O, BSNL, Jamnagar, Gujarat, India

The aim of this simulation work is to study effect of channel doping concentration. The channel lies under the oxide layer of the MOSFET. The results obtained show that as channel doping concentration decreases threshold voltage decreases and good saturation region in I-V curve is obtained and the drain current increases. So the lower channel doping concentration provides better mobility and hence, less velocity saturation.

Keywords

MOSFET; Channel Doping; Drain Current

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