Analysis & Validation of a MOSFET mobility model using BSIM3v3.2.2

Sanjay Kumar Singh; Subhanshu Kumar Verma

doi:https://doi.org/10.51976/ijari.311516

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Analysis & Validation of a MOSFET mobility model using BSIM3v3.2.2

Sanjay Kumar Singh, Subhanshu Kumar Verma

Vol 3 , Issue 1 , January - March 2015 | Pages: 90-91 | Research Paper

https://doi.org/10.51976/ijari.311516

Received: January 26, 2015 | Revised: February 15, 2015 | Accepted: February 28, 2015 | Published Online: March 15, 2015

Author Details ( * ) denotes Corresponding author

1. * Sanjay Kumar Singh, Department of Electronics and Communication Engineering, BPRCE, Gohana, Haryana, India (singhsanjaykumar234@gmail.com)

2. Subhanshu Kumar Verma, Department of Electronics and Communication Engineering, YMCA University, Faridabad, Haryana, India

This paper presents a mobility model for MOSFET comprising some of the vital areas such as, mobility. A comparison is done between BSIM3v3.2.2 and BSIM3v3.1 emphasizing the domain of mobility.

Keywords

Mosfet; Bsim; Threshold Voltage; Gate Oxide Thickness

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