Journal Press India^®

Author Details ( * ) denotes Corresponding author

To achieve high performance in HEMT devices such as high power gain cut off frequency and high current gain cut off frequency and to get maximum drain current and transconductance. By using lattice matched quaternary barrier such as In AlGaN and re-growing the ohmic contacts in HEMT device. To reach high fmax we have to combine a low gate recess technology, scaled device geometry and recessed source and drain omhic contact to simultaneously enable minimum short channel effect. Short channel effect will lead to current leakage in the device. This effect can be suppressed with the help of barrier and back barrier.

Keywords

HEMT; High Frequency

1. Yuanzheng Yue, Zongyang Hu, Jia Guo, InAlN/AlN/GaN HEMTs with Regrown Ohmic Contacts and fT of 370 GHz


2. A. Kamath, T. Patil, R. Adari, I. Bhattacharya, Double-Channel AlGaN/GaN High Electron Mobility Transistor With Back Barriers


3. Jia Guo, Ronghua Wang,Jai Verma, Xiang Gao, MBE-Regrown Ohmics in InAIN HEMTs With a Regrowth Interface Resistance of 0.05 D. Li, mm


4. Ronghua Wang, Guowang Li, Quaternary Barrier InAlGaN HEMTs With fT/fmax of 230/300 GHz


5. J. Schleeh, G. Alestig, J. Halonen, Ultralow-Power Cryogenic In P HEMT With Mnimum Noise Temperature of 1 K at 6 GHz


6. Jinwook W. Chung, William E. Hoke, Eduardo M. Chumbes, AlGaN/GaN HEMT With 300-GHz fmax


7. Stefano Tirelli, Diego Marti, Fully Passivated AlInN/GaN HEMTs With fT/fMAX of 205/220 GHz


8. Ronghua Wang, Guowang Li, 220-GHz Quaternary BarrierlnAlGaN/AlN/GaN HEMTs


9. Dong Seup Lee, Xiang Gao, Shiping Guo, 300-GHz InAlN/GaN HEMTs With InGaN Back Barrier