Journal Press India^®

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The present work represents the modeling of nano scale tin & indium films by computing the film thickness, mass deposited on the substrate and mass transfer rate with time dependent model using BDF solver. Tin and indium is evaporated from a resistively heated evaporator source at a temperature of 1855 K and 1485 K respectively in a pressure (vacuum) of 100 Pa onto silicon surface held on a fixed surface. The film thickness varies between 144 nm to 164 nm for Tin and 164 nm to 183 nm for Indium across the sample after 60 sec of deposition, with radial symmetry about the midpoint of the source. The film thickness as well as mass deposited at a point increases linearly with time. Since the angular distribution is of particular interest in this model, by increasing the integration resolution to a maximum value for ensuring the most accurate angular resolution when computing the flux. The surface temperature is required to specifying the temperature of the evaporating tin and indium source using constant elements for turn off the refinement in the post-processing settings. The SEM micrographs of tin and indium at different magnifications shows the 100nm to 1microns grain size along the grain boundaries. Similarly, XRD analysis with Kα (wavelength 1.541874) shows the peaks of intensity at different 2θ angles for different orientations of planes with polycrystalline structure.

Keywords

Physical Vapor Deposition; Modeling; Film Thickness Simulation; Tin Evaporation; Indium Evporation; Thin Film Deposition

1. Ali Moarrefzadeh et.al., Simulation and Modeling of Physical Vapor Deposition (PVD) Process, Wseas Transactions on Applied and Theoretical Mechanics, 7(2), 2012


2. G. H. Gilmer et.al., Thin film deposition: fundamentals and modeling, Journal of Computational Materials Science 12, 1998, 354-380


3. C. R. Zamarrenoa et al. Optical Fiber Refractometers based on Indium Tin Oxide Coatings with Response in the Visible Spectral Region


4. Souad Laghrib et al. , Tin oxide thin layers obtained by vacuum evaporation of tin and annealing under oxygen flow, Vacuum 82 (2008) 782-788


5. Sea-Way Jan, Si-Chen Lee, Preparation and Characterization of Indium-Tin-Oxide Deposited by Direct Thermal Evaporation of Metal Indium and Tin, J. Electrochemistry. Soc: Solid State Science and Technology, 134(8), 1987


6. D. Bruce Buchholz et.al, Differences between amorphous indium oxide thin films; Progress in Natural Science: Materials International, 23(5), 2013, 475-480


7. Alexandra C. Fechete et al., Growth of Indium Oxide Nanostructures by Thermal Evaporation, Sensor Technology lab., RMIT university, Australia, 1-4244-0453-3/06/$20.00@2006 IEEE


8. C. A. Pan, T. P. Ma, High quality transparent conductive indium oxide films prepared by thermal evaporation, Appl. Phys. Lett., American Institute of Physics, 37(2), 1980


9. B. Maniscalco, P. M. Kaminski, J. M. Walls, Thin film thickness measurement using Scanning White Light Interferometry, 550, 2014, 10-16


10. M. Trzcinski et al, Alloy formation of ultrathin indium and silver layers on W(100): A photoemission study, Material Science 589 (2005) 192 -200


11. Authur K. Burak Ucer, Vacuum evaporation, www.users.wfu.edu