Vol 3 , Issue 2 , April - June 2015 | Pages: 187-195 | Research Paper
Received: April 10, 2015 | Revised: April 30, 2015 | Accepted: May 20, 2015 | Published Online: June 15, 2015
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Thin films of CdTe deposited by thermal evaporation at evaporation rate of 1000Å thickness on Si substrate.Deposited thin filmthickness is optimized with vacuum deposition conditions by comparing film thickness value from in-process quartz crystal(piezoelectric transducer) with stylus operated dektek surface profiler.CdTe film of thickness 1000 Åhasbeen deposited on silicon substrate by vacuum evaporation method. The thin films are characterized and properties of deposited film depend upon the deposition rate, geometrical position of substrate from the source and surface condition of the silicon substrate. X-ray diffraction (XRD) studyshows that CdTe films are polycrystalline with preferential orientation of (111) plane in cubic phase for 1, 5 & 10 Å/sec deposition rates.Energy dispersive X-ray analysis of CdTe films at 1, 5 & 10 Å/sec deposition rates after quantification gives Te/Cd ratio of 0.98, 1.14 and 1.18 respectively. Scanning electron microscopy (SEM)micrographs of CdTeat different magnifications show grain size in the range of 19-25, 21-28 & 17-20 nm for deposition rates of 1, 5 & 10 Å/sec respectively along the grain boundaries. SEM micrograph at deposition rate of 10 Å/sec has smaller size, smooth, void-free and uniformly distributed over the surface of substrate than the other deposition rates.
Keywords
Physical Vapor Deposition; Film Thickness; CdTe Evaporation; Thin Film Deposition