Study of Nanostructured Co and Al doped ZnO films

Atikur Rahman; Chitrashi Mahajan

doi:https://doi.org/10.51976/ijari.341522

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Study of Nanostructured Co and Al doped ZnO films

Atikur Rahman, Chitrashi Mahajan

Vol 3 , Issue 4 , October - December 2015 | Pages: 122-129 | Research Paper

https://doi.org/10.51976/ijari.341522

Received: January 02, 2015 | Revised: January 10, 2015 | Accepted: November 30, 2015 | Published Online: December 15, 2015

Author Details ( * ) denotes Corresponding author

1. * Atikur Rahman, Department of Metallurgical and Materials Engineering, National Institute of Technology Srinagar, Hazratbal, Kashmir, India (atikurrhmn@gmail.com)

2. Chitrashi Mahajan, Department of Metallurgical and Materials Engineering, National Institute of Technology Srinagar, Hazratbal, Kashmir, India

Electroless Co(x = 0.04, 0.03, 0.02) and Al(y = 0.01, 0.02, 0.03) doped ZnO nanostructured thin films have been deposited on soda lime glass in the present work. The wet deposited films are dried in air and subsequently annealed at 500oC for 2 hr in a muffle furnace in air environment. The film deposited samples are characterized by SEM, XRD, Superconducting quantum interference device (SQUID) magnetometer and UV visible spectrophotometer. Microstructure of the Co and Al doped ZnO film is strongly affected by different doping concentration into ZnO matrix. X-ray diffraction analysis confirms the absence of metallic Co or Al clusters or any other phase different from wurtzite type ZnO. The field dependence of magnetization (M-H) curve of different concentration of Co and Al doped ZnO films measured at room temperature exhibits the clear ferromagnetism with saturation magnetization (Ms) and coercive field (Hc) of the order of 3.843 to 4.813 10-3(emu) and 400.389 to 436.769(Oe) respectively. It is found that ferromagnetism increased correspondingly with Co concentration. The relevant ferromagnetism mechanisms at room temperature in Co and Al doped ZnO films are discussed.

Keywords

Doped ZnO Film; Electroless; Magnetism; Dilute Magnetic Semiconductor.

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