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Using a noise amplifier cancellation approach, a quantitative and yield test on a low-noise amplifier was completed. A single inductor on a common source line can be used to construct a device with a broad bandwidth, low noise figures (NF), and high-power gain. The suggested low-noise amplifier uses complementary metal-oxide semiconductor technology for the optimum power gain and noise figure.
Keywords
Complementary Metal Oxide Semiconductor (CMOS); Low Noise Amplifier (LNA); Common Source (CS); Common Gate (CG)