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In this study, memory architectures for single-bit caches are studied. Voltage differential sense amplifiers and charge transfer differential sense amplifiers are used to study a six-transistor static random-access memory. In a single-bit, six-transistor static random-access memory, it has been demonstrated that the voltage differential sensing amplifier uses the least power.
Keywords
Six Transistor Static Random Access Memory Cell (STSRAMC); Voltage Differential Sense Amplifier (VDSA); Charge Transfer Differential Sense Amplifier (CTDSA); A Sense Amplifier (SA); Write Driver Circuit (WDC); Cache Memory Design for Single Bit Architecture (CMDSBA)